PART |
Description |
Maker |
2N5064 |
Thyristor sensitive gate
|
NXP Semiconductors Philips Semiconductors
|
WTPB16A60SW |
Sensitive Gate Bi-Directional Triode Thyristor
|
WINSEMI SEMICONDUCTOR
|
NCR169D NCR169DRLRM NCR169DRLRA NCR169D-D NCR169DR |
0.8A 400V SCR From old datasheet system General Purpose Sensitive Gate Silicon Controlled Rectifier Reverse Blocking Thyristor
|
ON Semiconductor
|
MAC997A6RLRP MAC997A8 MAC997A8RL1 MAC997A8RLRP MAC |
Sensitive Gate Triacs Silicon Bidirectional Thyristors SENSITIVE GATE TRACS 617SS Series Unipolar Hall-Effect Digital Position Sensor; dual output; 4-pin DIP IC 600 V, 0.8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-92
|
ONSEMI[ON Semiconductor]
|
T2322-D T2322B |
Sensitive gate Triac Silicon Bidirectional Thyristors(2.5A,200V敏感门三端双向可控硅晶闸 TRIAC 2.5A 200V Sensitive Gate Triacs
|
ON Semiconductor
|
Z86C95-20AEC |
Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:5mA; Current, It av:0.8A; Leaded Process Compatible:Yes RoHS Compliant: Yes 8位微控制
|
Microchip Technology, Inc.
|
MCR106-6G MCR106-8G MCR106-8 MCR106 MCR106-6 MCR10 |
Sensitive Gate Silicon Controlled Rectifier; Package: TO-225; No of Pins: 3; Container: Bulk; Qty per Container: 500 4 A, 600 V, SCR, TO-225AA SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
|
ONSEMI[ON Semiconductor]
|
BD814 BD844 |
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):8A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA 晶体管|晶体管|进步党| 80V的五(巴西)总裁| 1.5AI(丙)|02AA
|
Teridian Semiconductor, Corp.
|
BDW21A |
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:500uA Bipolar NPN Device in a Hermetically sealed TO3
|
Glenair, Inc. Seme LAB
|
BD139-25 BD135-25 BD137-25 |
Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:5mA; Current, It av:0.8A; Leaded Process Compatible:Yes RoHS Compliant: Yes TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1.5A I(C) | TO-126 Diac Thyristor; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Package/Case:Axial Leaded; Peak Surge Current:2A; Breakover Voltage Min:30V RoHS Compliant: Yes 晶体管|晶体管|叩| 45V的五(巴西)总裁| 1.5AI(丙)|126
|
HIROSE ELECTRIC Co., Ltd.
|
HD-0125M3-GH HD-0155M3-IH HD-0195M3-DH HD-0195M3-D |
Stick Coupler 3 dB 90° Card Couplers 3 dB 90∑ Card Couplers 3 dB 90 Card Couplers SCR-600VRM 10A Bridge Rectifier; Repetitive Reverse Voltage Max, Vrrm:100V; Package/Case:TO-202; Current Rating:4A; Mounting Type:Through Hole 3 dB 90Card Couplers 3分贝90Σ卡耦合 SCR Thyristor; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:100V; On-State RMS Current, IT(rms):800mA; Peak Non Repetitive Surge Current, Itsm:8A; Gate Trigger Current Max, Igt:200uA 3分贝90Σ卡耦合 3 dB 90??Card Couplers 3 dB 90?Card Couplers
|
Hirose Electric USA, INC. HIROSE ELECTRIC Co., Ltd. HIROSE[Hirose Electric]
|
S2060C S2061D |
4A sensitive-gate silicon controlled rectifier. Vrsxm 400V. 4A sensitive-gate silicon controlled rectifier. Vrsxm 500V.
|
General Electric Solid State
|